Semiconductor structures and methods of manufacturing the same

ABSTRACT

A semiconductor structure has embedded stressor material for enhanced transistor performance. The method of forming the semiconductor structure includes etching an undercut in a substrate material under one or more gate structures while protecting an implant with a liner material. The method further includes removing the liner material on a side of the implant and depositing stressor material in the undercut under the one or more gate structures.

FIELD OF THE INVENTION

The invention relates to semiconductor structures and methods ofmanufacture, and more particularly, to semiconductor structures havingembedded stressor material for enhanced transistor performance andmethods of manufacture.

BACKGROUND

To improve the current flowing through the channel of a transistor, themobility of the carriers in the channel can be increased. This increasedmobility of the carriers in the channel typically increases theoperational speed of the transistor. It is further known that mechanicalstresses within a semiconductor device substrate can modulate deviceperformance by, for example, increasing the mobility of the carriers inthe semiconductor device. That is, stresses within a semiconductordevice are known to enhance semiconductor device characteristics. Thus,to improve the characteristics of a semiconductor device, tensile and/orcompressive stresses are created in the channel of the n-type devices(e.g., NFETs) and/or p-type devices (e.g., PFETs).

However, the same strain component, for example, tensile strain orcompressive strain in a certain direction, may improve the devicecharacteristics of one type of device (i.e., n-type device or p-typedevice) while discriminatively affecting the characteristics of theother type device. Accordingly, in order to maximize the performance ofboth NFETs and PFETs within integrated circuit (IC) devices, the straincomponents should be engineered and applied differently for NFETs andPFETs.

Distinctive processes and different combinations of materials are usedto selectively create a strain in a FET. For example, liners ofdifferent materials on gate sidewalls have been used to selectivelyinduce the appropriate strain in the channels of the FET devices. Byproviding gate liners the appropriate strain is applied closer to thedevice. While this method does provide tensile strains to the NFETdevice and compressive strains along the longitudinal direction of thePFET device, using different materials, they may require additionalmaterials and/or more complex processing, and thus, result in highercost. Further, the level of strain that can be applied in thesesituations is typically moderate (i.e., on the order of 100s of MPa),and it is difficult to optimize the stress levels needed for highperformance devices. Thus, it is desired to provide more cost-effectiveand simplified methods for creating larger tensile and compressivestrains in the channels of the NFETs and PFETs, respectively.

Accordingly, there exists a need in the art to overcome the deficienciesand limitations described hereinabove.

SUMMARY

In first aspect of the invention, a method comprises etching an undercutin a substrate material under one or more gate structures whileprotecting an implant with a liner material. The method further includesremoving the liner material on a side of the implant and depositingstressor material in the undercut under the one or more gate structures.

In another aspect of the invention, a method comprises forming gatestructures on a substrate. The method comprises forming source/drainextension implants in the substrate and under the gate structures. Themethod comprises forming spacers on the gate structures. The methodcomprises forming recesses in the substrate and on the sides of the gatestructures. The method comprises forming a liner on sidewalls of therecesses, which protect the extension implants during subsequentprocesses. The method comprises etching an undercut in the substrate tounderneath the gate structures. The method comprises removing the lineron the sidewalls of the recesses. The method comprises depositingstressor material in the recesses and the undercut.

In yet another aspect of the invention, a structure comprises at leastone gate structure formed on a substrate and sidewall spacers on sidesof each of the least one gate structure. The structure further comprisesextension implants under each of the at least one gate structure andrecesses and undercuts in the substrate which are filled with stressormaterial. The recesses are on sides of each of the at least one gatestructure and the undercuts are under each of the at least one gatestructure and under the extension implants.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The present invention is described in the detailed description whichfollows, in reference to the noted plurality of drawings by way ofnon-limiting examples of exemplary embodiments of the present invention.

FIG. 1 shows a beginning structure and respective processing steps inaccordance with aspects of the invention;

FIGS. 2-8 show additional structures and respective processing steps inaccordance with aspects of the invention;

FIGS. 9 and 10 show an alternative structure and respective processingsteps in accordance with aspects of the invention; and

FIG. 11 is a flow diagram of a design process used in semiconductordesign, manufacture, and/or test.

DETAILED DESCRIPTION

The invention relates to semiconductor structures and methods ofmanufacture, and more particularly, to semiconductor structures havingembedded stressor material for enhanced transistor performance andmethods of manufacture. In implementation, the present inventionprovides a process to integrate a stressor material into an undercut andrecess formed in a substrate. Advantageously, the undercut can beoptimized for particular stress concentrations of the device and, hence,provide improved manufacturing control and thus enhanced deviceperformance.

In embodiments, the device can be, for example, a PFET or NFET, whichhas enhanced performance characteristics. In embodiments, the enhancedcharacteristics can be controlled and/or optimized by using epitaxialstressor material embedded in the undercut and/or recess such as, forexample, Si_(1-x)Ge_(X) for a PFET and S_(1-x)C_(X) for an NFET, wherethe epitaxial stressors can be in-situ doped or intrinsic. The method ofthe present invention also provides improved control of deviceperformance by optimizing the amount of stressor material used for thedevice. As an example, the present invention can maximize the amount ofstressor material placed in the undercut and/or recess to maximize thechannel stress for both the NFET and PFET.

FIG. 1 shows a beginning structure in accordance with aspects of theinvention. The beginning structure 5 includes a substrate 10 such as,for example, SOI or Buried Oxide. It should be understood that thesubstrate 10 can be other materials known to those of skill it the art.A gate insulator layer 15 is deposited or grown on the substrate 10. Thegate insulator layer 15 can be, for example, oxide or high-k materialsuch as, for example, an oxynitride, silicon oxynitride, Hf or acombination of these materials in a stacked structure. The gateinsulator layer 15 can range in thickness depending on the material,combination of materials and/or technology node. For example, the gateinsulator layer 15 can range from about 10A to about 55A; although otherdimensions are contemplated by the present invention.

Still referring to FIG. 1, a gate material 20 is formed on the gateinsulator layer 15. The gate material 20 can be, for example, a polygate or high-k material. In further embodiments, the gate material 20can be a metal or metal alloy. An optional cap material 25 can bedeposited or grown on the gate material 20. The cap material 25 can be,for example, an oxide or nitride material.

In FIG. 2, the gate insulator layer 15 and gate material 20 undergo anetching process such as, for example, a reactive ion etching (RIE), toform gate structures 30. The etching process will stop at the substrate10. In the case of using the optional cap material 25, such layer willalso undergo the etching process.

In FIG. 3, the structure undergoes implantation and annealing processes.More specifically, the structure undergoes an extension implant andannealing process to form extension implants 35. In embodiments, theimplant dopant can be Boron for a P-type device, or Arsenic orPhosphorous for an N-type device. After the implant, the structureundergoes an annealing process. In embodiments, the annealing process isat a temperature of about between 800° C. to 1080° C. in order toactivate the implant dopant. The annealing process forms the extensionimplants 35, preferably under the gate structure 30.

In FIG. 4, a material 40 is deposited over the gate structure 30 andexposed portions of the substrate 10 to form a spacer on the sidewallsof the gate structure 30. In embodiments, the material 40 can be anitride material. In further embodiments, the material 40 can be oxideor other insulator material. The material 40 can be formed using anyconventional deposition process such as, for example, PECVD, LECVD, CVD,MLD or ALD processes.

FIG. 5 shows additional processing steps in accordance with theinvention. In particular, FIG. 5 shows the formation of a spacer 40 aand a recess 45. To form the spacer 40 a, the material 40 deposited onthe substrate 10 is removed (etched away) using conventional etchantsselective to the underlying substrate 10. This etching process is ananisotropic etching process. The remaining material will form the spacer40 a.

Thereafter, the structure undergoes a second etching process selectiveto the spacer 40 a, which is also an anisotropic silicon etchingprocess. In this etching process, recesses 45 are formed in thesubstrate 10, on sides of the gate structures 30. It should beunderstood that this etching process will also form recesses 45 betweenadjacent gate structures 30. In embodiments, the recesses 45 can rangein depth from about 1 nm to about 30 nm, depending on the ground rulesassociated with technology node, the desired transistor electrostaticconfiguration and amount of stress to be placed on the gate structures30. It should also be understood by those of skill in the art that otherdimensions for the recesses 45 are contemplated by the presentinvention, depending on the technology node, dimensions of theunderlying substrate 10, etc.

In FIG. 6, a liner 50 is formed on the sidewalls and the bottom of therecesses 45. In contemplated embodiments, the liner 50 can be either thesame or different material than that used to form the spacer 40 a. Forexample, the liner and spacer 40 a can be an oxide material, with theliner 50 formed by an oxidation or deposition process. In alternativeembodiments, the liner 50 and spacer 40 a can be a nitride material,with the liner 50 formed by a deposition process. Alternatively, theliner 50 can be an oxide material and the spacer 40 a can be a nitridematerial, or vice versa. It is noted, though, that subsequent processingsteps are affected by the materials used for the liner 50 and spacer 40a. For example, by using different materials for the liner 50 and spacer40 a a selective RIE to the, e.g., spacer material 40, can be used toetch the liner 50. In such a selective RIE, a block mask would not beneeded to protect the spacer 40 a. Alternatively, using the samematerials for the liner 50 and spacer 40 a, a block mask would berequired to protect the spacer material 40 during a liner etch.

FIG. 7 represents two etching processes in accordance with aspects ofthe invention. In a first etching process, the structure of FIG. 7undergoes an anisotropic RIE process to remove the liner material on thebottom of the recess 45. This etching step can also deepen the recess45. The structure then undergoes an isotropic reactive ion etching (RIE)or a wet etch to provide undercuts 55 under the gate structures 30. Inembodiments, the wet etchant can be, for example, ammonia, which willresult in sharp corners “C”, as shown in FIG. 7, or rounded shapes as inFIG. 9 after isotropic etch.

In embodiments, the liner 50 will protect the extension implants 35during the isotropic RIE process. This, advantageously, will ensure thatthe threshold voltage control, Vt, provided by the extension implants 35remains constant (i.e., is unaffected by the etching process).Additionally, the liner 50 can control the vertical space “V” betweenthe undercut 55 and the extension implants 35, providing addedoptimization of the stress component. For example, the vertical space“V” will control the distance between a stressor material (to be placedin the undercut) and the gate structure 30. As this distance can bevariable, the stress component acting on the gate structure 30 can vary,e.g., be a weak, moderate or strong stress component.

Also, it is possible to vary the time of the second RIE process in orderto optimize the stress component. For example, a longer etch time willresult in a deeper recess and undercut and, hence, less substratematerial, e.g., Si, between the undercuts and the gate structure 30, ascompared to a shorter etch time. Also, the longer etch time will closethe gap “G” under the gate structure 30, resulting in less space betweenthe stressor material on both sides of the gate structure and,effectively, increasing the amount of stressor material required to fillin the recess 45 and undercut 55. Accordingly, the longer etch time willthus result in more stressor material being placed in the undercuts 55,under the gate structure 30.

FIG. 8 shows a structure and respective processing steps in accordancewith the invention. In FIG. 8, the liner 50 is removed using, forexample, an isotropic etching process. The removal of the liner 50 willnot affect the performance characteristics of the extension implants 35.Stressor material 60 is placed (deposited) in the recesses 45 andundercuts 55 using a conventional deposition process. In embodiments,the stressor material 60 can be, for example, Si_(1-x)Ge_(X) for a PFETand Si_(1-x)C_(X) for an NFET. The resultant structure thus providesimproved control of the device performance by optimizing the stressormaterial under the gate structures 30. The resultant method can alsomaximize the amount of stressor material in the recess and undercuts inorder to maximize the channel stress for both an NFET and PFET.

FIGS. 9 and 10 show an alternative structure and processing steps inaccordance with the invention. In FIG. 9, etching and depositionprocesses are performed in accordance with aspects of the invention,beginning with the structure of FIG. 6. In a first etching process, thestructure undergoes an anisotropic RIE process to remove the linermaterial on the bottom of the recess(es). This etching step can alsodeepen the recess(es). The structure then undergoes an isotropic RIEprocess to provide undercuts under the gate structures. In embodiments,the isotropic RIE results in rounded corners “RC”, as shown in FIG. 9.

In FIG. 10, the liner 50 is removed using, for example, an isotropicetching process. The removal of the liner 50 will not affect theperformance characteristics of the extension implants 35. Stressormaterial 60 is placed (deposited) in the recesses 45 and undercuts 55using a conventional deposition process. In embodiments, the stressormaterial 60 can be, for example, Si_(1-x)Ge_(X) for a PFET andSi_(1-x)C_(X) for an NFET. The resultant structure thus providesimproved control of the device performance by optimizing the stressormaterial under the gate structures 30. The resultant method can alsomaximize the amount of stressor material in the recess and undercuts inorder to maximize the channel stress for both an NFET and PFET.

As in the previous embodiment, the liner will protect the extensionimplants during the isotropic RIE process. Additionally, the liner cancontrol the vertical space between the undercut and the extensionimplants, providing added optimization of the stress component. Also, itis possible to vary the time of the RIE process in order to optimize thestress component. The liner is removed using, for example, an isotropicetching process. Stressor material 60 is placed (deposited) in therecess(es) and undercuts using a conventional deposition process. Inembodiments, the stressor material 60 can be, for example,Si_(1-x)Ge_(X) for a PFET and Si_(1-x)C_(X) for an NFET.

DESIGN STRUCTURE

FIG. 11 shows a block diagram of an exemplary design flow 900 used forexample, in semiconductor design, manufacturing, and/or test. Designflow 900 may vary depending on the type of IC being designed. Forexample, a design flow 900 for building an application specific IC(ASIC) may differ from a design flow 900 for designing a standardcomponent or from a design flow 900 for instantiating the design into aprogrammable array, for example a programmable gate array (PGA) or afield programmable gate array (FPGA) offered by Alter® Inc. or Xilinx®Inc. Design structure 920 is preferably an input to a design process 910and may come from an IP provider, a core developer, or other designcompany or may be generated by the operator of the design flow, or fromother sources. Design structure 920 comprises an embodiment of theinvention as shown in FIGS. 1-10 in the form of schematics or HDL, ahardware-description language (e.g., Virology, VHDL, C, etc.). Designstructure 920 may be contained on one or more machine-readable media.For example, design structure 920 may be a text file or a graphicalrepresentation of an embodiment of the invention as shown in FIGS. 1-10.Design process 910 preferably synthesizes (or translates) embodiments ofthe invention as shown in FIGS. FIGS. 1-10 into a net list 980, wherenet list 980 is, for example, a list of wires, transistors, logic gates,control circuits, I/O, models, etc. that describes the connections toother elements and circuits in an integrated circuit design and recordedon at least one of machine readable media. For example, the medium maybe a CD, a compact flash, other flash memory, a packet of data to besent via the Internet, or other networking suitable means. The synthesismay be an iterative process in which net list 980 is resynthesized oneor more times depending on design specifications and parameters for thecircuit.

Design process 910 may include using a variety of inputs; for example,inputs from library elements 930 which may house a set of commonly usedelements, circuits, and devices, including models, layouts, and symbolicrepresentations, for a given manufacturing technology (e.g., differenttechnology nodes, 32 nm, 45 nm, 90 nm, etc.), design specifications 940,characterization data 950, verification data 960, design rules 970, andtest data files 985 (which may include test patterns and other testinginformation). Design process 910 may further include, for example,standard circuit design processes such as timing analysis, verification,design rule checking, place and route operations, etc. One of ordinaryskill in the art of integrated circuit design can appreciate the extentof possible electronic design automation tools and applications used indesign process 910 without deviating from the scope and spirit of theinvention. The design structure of the invention is not limited to anyspecific design flow.

Design process 910 preferably translates an embodiment of the inventionas shown in FIGS. 1-10, along with any additional integrated circuitdesign or data (if applicable), into a second design structure 990.Design structure 990 resides on a storage medium in a data format usedfor the exchange of layout data of integrated circuits and/or symbolicdata format (e.g. information stored in a GDSII (GDS2), GL1, OASIS, mapfiles, or any other suitable format for storing such design structures).Design structure 990 may comprise information such as, for example,symbolic data, map files, test data files, design content files,manufacturing data, layout parameters, wires, levels of metal, vias,shapes, data for routing through the manufacturing line, and any otherdata required by a semiconductor manufacturer to produce embodiments ofthe invention as shown in FIGS. 1-10. Design structure 990 may thenproceed to a stage 995 where, for example, design structure 990:proceeds to tape-out, is released to manufacturing, is released to amask house, is sent to another design house, is sent back to thecustomer, etc.

The methods as described above is used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “comprising,” when used in this specification, specify thepresence of stated features, integers, steps, operations, elements,and/or components, but do not preclude the presence or addition of oneor more other features, integers, steps, operations, elements,components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of allmeans or step plus function elements, if any, in the claims below areintended to include any structure, material, or act for performing thefunction in combination with other claimed elements as specificallyclaimed. The description of the present invention has been presented forpurposes of illustration and description, but is not intended to beexhaustive or limited to the invention in the form disclosed. Manymodifications and variations will be apparent to those of ordinary skillin the art without departing from the scope and spirit of the invention.The embodiments were chosen and described in order to best explain theprinciples of the invention and the practical application, and to enableothers of ordinary skill in the art to understand the invention forvarious embodiments with various modifications as are suited to theparticular use contemplated.

What is claimed is:
 1. A structure comprising: at least one gatestructure formed on a substrate; sidewall spacers on sides of each ofthe at least one gate structure; extension implants under an insulatormaterial of the at least one gate structure; and recesses and undercutsin the substrate which are filled with stressor material, wherein: therecesses are on sides of the at least one gate structure; the undercutsare under the at least one gate structure and under the extensionimplants; and the extension implants are directly under the insulatormaterial of the at least one gate structure.
 2. The structure of claim1, wherein the extension implants are directly under the sidewallspacers.
 3. The structure of claim 1, further comprising a materialdeposited on a top and sidewalls of the at least one gate structure. 4.The structure of claim 3, wherein the sidewall spacers are formed fromthe material deposited on the top and sidewalls of the at least one gatestructure.
 5. The structure of claim 3, wherein a top surface of thestressor material is above the at least one gate structure.
 6. Thestructure of claim 5, wherein the top surface of the stressor materialis planar with a top surface of the material deposited on the top andsidewalls of the at least one gate stack structure.
 7. The structure ofclaim 1, wherein the stressor material is Si_(1-x)C_(X).
 8. Thestructure of claim 1, wherein the stressor material is Si_(1-x)Ge_(X).9. A structure comprising: gate structures on a substrate; extensionimplants in the substrate and directly under the gate structures;spacers on the gate structures; recesses in the substrate and on thesides of the gate structures; an undercut in the substrate underneaththe gate structures; and stressor material in the recesses and theundercut.
 10. The structure claim 9, wherein the recesses are formed ata controllable depth.
 11. The structure of claim 9, wherein the stressormaterial is Si_(1-x)C_(X).
 12. The structure of claim 9, wherein thestressor material is Si_(1-x)Ge_(X).
 13. The structure of claim 9,wherein a top surface of the stressor material is above the one or moregate structures.